UPA1726G-E1 查看數據表（PDF） - NEC => Renesas Technology

零件编号

产品描述 (功能)

生产厂家

UPA1726G-E1

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

µ PA1726

ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Drain to Source On-state Resistance

5

5

RDS(on)1

RDS(on)2

RDS(on)3

VGS = 4.5 V, ID = 6.0 A

VGS = 4.0 V, ID = 6.0 A

VGS = 2.5 V, ID = 6.0 A

7.2 9.1 mΩ

7.5 10.0 mΩ

9.1 12.5 mΩ

Gate to Source Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

0.5 1.0 1.5 V

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 6.0 A

12 24

S

Drain Leakage Current

Gate to Source Leakage Current

IDSS

VDS = 20 V, VGS = 0 V

IGSS

VGS = ±12 V, VDS = 0 V

10 µA

±10 µA

Input Capacitance

Ciss

VDS = 10 V

2700

pF

Output Capacitance

Coss

VGS = 0 V

880

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

460

pF

Turn-on Delay Time

td(on)

ID = 6.0 A

50

ns

Rise Time

tr

VGS(on) = 4.5 V

170

ns

Turn-off Delay Time

td(off)

VDD = 10 V

100

ns

Fall Time

tf

RG = 10 Ω

190

ns

Total Gate Charge

QG

ID = 12 A

25

nC

Gate to Source Charge

QGS

VDD = 16 V

4

nC

Gate to Drain Charge

QGD

VGS = 4.5 V

11

nC

Body Diode Forward Voltage

VF(S-D) IF = 12 A, VGS = 0 V

0.8

V

Reverse Recovery Time

trr

IF = 12 A, VGS = 0 V

50

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A/ µs

50

nC

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

RG

PG.

VGS

0

τ

τ = 1µs

Duty Cycle ≤ 1 %

RL

VDD

VGS

VGS

Wave Form

10 %

0

VGS(on) 90 %

ID

90 %

ID

ID

0 10 %

Wave Form

90 %

10 %

td(on) tr td(off) tf

ton

toff

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet G14050EJ1V0DS00

Share Link: