UPA1730G-E2 查看數據表（PDF） - NEC => Renesas Technology
零件编号
产品描述 (功能)
生产厂家
UPA1730G-E2 Datasheet PDF : 8 Pages
| |||
µ PA1730
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
20
18
VGS = −4.0 V
16
−4.5 V
14
12
−10 V
10
8
6
ID = −6.5A
4
−50
0
50 100 150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000
100
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
−0.1
−1
−10
−100
IF - Diode Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
VGS = −4.0 V
1
0V
0.1
0.01
0.001
0.00
0.50
1.00
1.50
VSD - Source to Drain Voltage - V
1 000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
td(on)
10
1
−0.1
VDS = −15 V
VGS = −10 V
RG = 10Ω
−1
−10
−100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
ID = −13.0 A
−30
−12
VDS = −24 V
VGS
−15 V
−10
−20
−6 V
−8
−6
−10
−4
−2
VDS
0
0 10 20 30 40 50 60 70
QG - Gate Charge - nC
Data Sheet G14284EJ1V0DS00
5
Share Link: 