µPA1731
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
VGS = −4.0 V
20
−4.5 V
15
−10 V
10
5
ID = −5.0 A
0
−50
0
50 100 150
Tch - Channel Temperature - ˚C
−1 0000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Ciss
−1 000
Coss
Crss
−100
VGS = 0 V
f = 1 MHz
−10
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
10000
1000
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 100 A/µ s
VGS = 0 V
100
10
1
−0.1
−1
−10
IF - Diode Current - A
−100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = −4.5 V
0V
10
1
0.1
0.01
0.001
0
0.5
1.0
1.5
VF - Source to Drain Voltage - V
1 000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
td(on)
10
1
−0.1
VDS = −15 V
VGS = −10 V
RG = 10Ω
−1
−10
−100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
−14
ID = −10 A
−12
−30
VDS = −24 V
VGS
−10
−15 V
−8
−20
−6 V
−6
−4
−10
−2
VDS
0
0
10
20
30
40
50
QG - Gate Charge - nC
Data Sheet G14285EJ2V1DS
5