µPA1750
1 000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.01
0.001
10 µ 100 µ
1m
10 m 100 m
Mounted on ceramic
substrate of 2000 mm2 × 1.1 mm
Single Pulse , 1 unit
1
10
100 1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS= –10 V
Pulsed
TA = –25 ˚C
10
25 ˚C
75 ˚C
125 ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.3
Pulsed
0.2
1
0.1
ID = –1.8 A
0.1
–0.1
–1
–10
ID - Drain Current - A
–100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.3
Pulsed
0.2
VGS = –4.0 V
0.1
VGS = –10 V
0
–1
–10
–100
ID - Drain Current - A
0
–5
–10
–15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
–2.0
VDS = –10 V
ID = –1 mA
–1.5
–1.0
–0.5
0
–50
0
50
100 150
Tch - Channel Temperature - ˚C
4