DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.20
VGS = –4 V
0.15
0.10
–10 V
0.05
0
–50
0
ID = –1.8 A
50
100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
100
Ciss
Coss
Crss
10
–0.1
–1
–10
VDS - Drain to Source Voltage - V
–100
1 000
REVERSE RECOVERY TIME vs.
BODY DIODE CURRENT
di/dt = 100 A/µs
VGS = 0
100
10
1
–0.1
–1
–10
–100
IF - Diode Current - A
µPA1750
–100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
–10 VGS = –10 V
–4 V
–1
VGS = 0
–0.1
0
–0.5
–1.0
–1.5
VSD - Source to Drain Voltage - V
1000
100
SWITCHING CHARACTERISTICS
td(off)
tr
tf
10
1
–0.1
td(on)
VDD = –10 V
VGS(on) = –10 V
RG = 10 Ω
–1
–10
–100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–40
–16
ID = –1.8 A
–30 VDD = –16 V
–12
–10 V
–4 V
VGS
–20
–8
–10
–4
VDS
0
0
10
20
30
40
QG - Gate Charge - nC
5