UPA1755G-E2 查看數據表（PDF） - NEC => Renesas Technology
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UPA1755G-E2 Datasheet PDF : 8 Pages
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µPA1755
TYPICAL CHARACTERISTICS (TA = 25 °C)
1 000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.01
0.001
10 µ 100µ
1m
10 m 100 m
Mounted on ceramic
substrate of 2000mm2 × 1.1mm
Single Pulse, 1 unit
1
10
100 1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS=10V
Pulsed
TA=−50˚C
TA=−25˚C
10 TA= 25˚C
TA=75˚C
1
TA=125˚C
TA=150˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
70
Pulsed
60
50
40
30
ID=3.5 A
20
10
0.1
1
10
100
ID- Drain Current - A
0
5
10
15
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
70
60
50
VGS=4.5V
40
30
VGS=10V
20
10
0
1
10
100
ID - Drain Current - A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS=10 V
2.4
ID=1 mA
2.0
1.6
1.2
0.8
− 50
0
50
100 150
Tch - Channel Temperature - ˚C
Data Sheet G12715EJ1V0DS00
3
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