UPA1756G-E2 查看數據表（PDF） - NEC => Renesas Technology
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UPA1756G-E2 Datasheet PDF : 8 Pages
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µ PA1756
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
VGS = 4.5 V, ID = 3.0 A
VGS = 2.5 V, ID = 3.0 A
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 3.0 A
VDS = 20 V, VGS = 0 V
VGS = ±12.0 V, VDS = 0 V
VDS = 10 V
VGS = 0 V
f = 1 MHz
ID = 3.0A
VGS(on) = 4.0 V
VDD = 10 V
RG = 10 Ω
ID = 6.0 A
VDD = 16 V
VGS = 4.0 V
IF = 6.0 A, VGS = 0 V
MIN. TYP. MAX. UNIT
20.0 30 mΩ
25.8 40 mΩ
0.5 0.7 1.5 V
4.0 12
S
10 µ A
±10 µ A
800
pF
360
pF
70
pF
110
ns
425
ns
1050
ns
1200
ns
11
nC
2.0
nC
4.6
nC
0.8
V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG. RG = 10 Ω
VGS
0
τ
τ = 1µ s
Duty Cycle ≤ 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on)
ID
90 %
ID
Wave Form
0 10 %
td(on)
ID
tr
td(off)
90 %
90 %
10 %
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D12909EJ1V0DS00
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