UPA1756G-E1 查看數據表（PDF） - NEC => Renesas Technology
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UPA1756G-E1 Datasheet PDF : 8 Pages
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µ PA1756
TYPICAL CHARACTERISTICS (TA = 25 °C)
1 000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.01
0.001
10µ 100 µ
1m
10 m 100 m
Mounted on ceramic
substrate of 2000mm2 x 1.1mm
Single Pulse , 1 unit
1
10
100 1 000
PW - Pulse Width - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = -50 ˚C
-25 ˚C
25 ˚C
VDS=10V
Pulsed
10
TA = 75 ˚C
125 ˚C
150 ˚C
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
75
Pulsed
50
25
ID=3A
0.1
1
10
100
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
60
Pulsed
0
2 4 6 8 10 12 14
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.0
VDS = 10 V
ID = 1 mA
40
VGS=2.5V
0.5
VGS=4V
20
VGS=4.5V
0
1
10
100
ID - Drain Current - A
0 - 50
0
50
100 150
Tch - Channel Temperature -˚C
Data Sheet D12909EJ1V0DS00
3
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