UPA1757G-E1 查看數據表（PDF） - NEC => Renesas Technology
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UPA1757G-E1 Datasheet PDF : 8 Pages
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Electrical Characteristics (TA = 25 °C)
Characteristics
Symbol
Test Conditions
Drain to source on-state resistance
Gate to source cutoff voltage
Forward transfer admittance
Drain leakage current
Gate to source leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body diode forward voltage
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
VGS = 4.5 V, ID = 3.5 A
VGS = 2.5 V, ID = 3.5 A
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 3.5 A
VDS = 20 V, VGS = 0 V
VGS = ±12.0 V, VDS = 0 V
VDS = 10 V
VGS = 0 V
f = 1 MHz
ID = 3.5 A
VGS(on) = 4.0 V
VDD = 10 V
RG = 10 Ω
ID = 7.0 A
VDD = 16 V
VGS = 4.0 V
IF = 7.0 A, VGS = 0 V
µ PA1757
MIN. TYP. MAX. Unit
16.2 23 mΩ
22 32 mΩ
0.5 0.8 1.5 V
5.0 13
S
10 µ A
±10 µ A
750
pF
420
pF
140
pF
57
ns
206
ns
593
ns
815
ns
13.0
nC
2.6
nC
5.3
nC
0.75
V
Test circuit 1 Switching time
D.U.T.
RG
PG. RG = 10 Ω
VGS
0
τ
τ = 1µ s
Duty Cycle ≤ 1 %
RL
VDD
VGS
VGS
Wave Form
010 %
VGS(on)
ID
90 %
ID
Wave Form
0 10 %
td(on)
ID
tr
td(off)
90 %
90 %
10 %
tf
ton
toff
Test circuit 2 Gate charge
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
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