UPA1757G-E1 查看數據表（PDF） - NEC => Renesas Technology
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UPA1757G-E1 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS=2.5V
30
20
VGS=4.5V
10
0
ID= 3.5A
- 50
0
50 100 150
Tch - Channel Temperature -˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt =100A/µ s
VGS = 0
100
10
1
0.1
1
10
100
IF - Diode Current - A
µ PA1757
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
VGS=2.5V
10
VGS=0
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1 000
100
SWITCHING CHARACTERISTICS
tr
tf
td(off)
td(on)
10
1
0.1
VDD =10V
VGS(on) = 4V
RG =10Ω
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
8
ID=7.0A
30
VDD=16V
VGS
6
10V
4V
20
4
10
2
VDS
0
0
4
8
12
16
QG - Gate Charge - nC
4
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