µPA1758
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
VGS=2.5V
40
30
20
VGS=4.5V
10
0
− 50
0
ID= 3.0 A
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
100
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt =100A/µs
VGS = 0
100
10
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
VGS=2.5V
10
VGS=0V
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1 000
100
SWITCHING CHARACTERISTICS
tf
tr
td(off)
td(on)
10
1
0.1
VDS=15V
VGS=4V
RG =10Ω
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID=6.0 A 8
VGS = 4 V
30
VDD=24 V
VGS
6
VDD=15 V
VDD=6 V
20
4
10
2
0
0
4
8
12
16
QG - Gate Charge - nC
4