B) P-Channel
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
80
VGS = −4.0 V
−4.5 V
−10 V
60
40
20
0
− 50
0
50
100
150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
−10.1
−1
−10
ID - Drain Current - A
−100
µPA1792
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = −4.5 V
10
VGS = 0 V
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source to Drain Voltage - V
10000
SWITCHING CHARACTERISTICS
1000
100
10
1
−0.1
tr
tf
td(off)
td(on)
VDS = −15 V
VGS = −10 V
RG = 10 Ω
−1
−10
−100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−30
−12
−25
−10
VDD = −24 V
−15 V
−20
−6 V
−8
−15
−6
VGS
−10
−4
−5
VDS
−2
ID = −5.8 A
0
0
0
5
10
15
20
QG - Gate Charge - nC
10
Data Sheet G14557EJ1V0DS00