DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPA1792 查看數據表(PDF) - NEC => Renesas Technology

零件编号
产品描述 (功能)
生产厂家
UPA1792 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
B) P-Channel
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
80
VGS = 4.0 V
4.5 V
10 V
60
40
20
0
50
0
50
100
150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
0.1
1
10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
10.1
1
10
ID - Drain Current - A
100
µPA1792
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = 4.5 V
10
VGS = 0 V
1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source to Drain Voltage - V
10000
SWITCHING CHARACTERISTICS
1000
100
10
1
0.1
tr
tf
td(off)
td(on)
VDS = 15 V
VGS = 10 V
RG = 10
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
12
25
10
VDD = 24 V
15 V
20
6 V
8
15
6
VGS
10
4
5
VDS
2
ID = 5.8 A
0
0
0
5
10
15
20
QG - Gate Charge - nC
10
Data Sheet G14557EJ1V0DS00

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]