B) P-Channel
FORWARD TRANSFER CHARACTERISTICS
−100
Pulsed
−10
TA =150˚C
−1
75˚C
−0.1
−0.01
−0.0010
25˚C
−25˚C
VDS = −10 V
−1
−2
−3
−4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10V
Pulsed
TA = −25˚C
10
25˚C
75˚C
150˚C
1
0.1
−0.001
−0.01 −0.1
−1
−10
ID- Drain Current - A
−100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
Pulsed
80
VGS = −4.0 V
60
−4.5 V
40
−10 V
20
0
−0.1
−1
−10
−100
ID - Drain Current - A
µPA1792
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−30
Pulsed
−25
VGS = −10 V
−20
−4.5 V
−4.0 V
−15
−10
−5
0
0
−0.4
−0.8
−1.2
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
ID = −1.2 A
Pulsed
50
−5.8 A
40
30
20
10
0
0
−5
−10
−15
VGS - Gate to Source Voltage - V
−3.0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = −10 V
ID = −1 mA
−2.0
−1.0
0
− 50
0
50
100
150
Tch - Channel Temperature - ˚C
Data Sheet G14557EJ1V0DS00
9