UPA1804 查看數據表（PDF） - NEC => Renesas Technology

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UPA1804

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±16 V, VDS = 0 V

Gate to Source Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 4.0 A

Drain to Source On-state Resistance

RDS(on)1 VGS = 10 V, ID = 4.0 A

RDS(on)2 VGS = 4.5 V, ID = 4.0 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 15 V

Rise Time

tr

ID = 4.0 A

Turn-off Delay Time

td(off)

VGS(on) = 10 V

Fall Time

tf

RG = 10 Ω

Total Gate Charge

QG

VDS = 24 V

Gate to Source Charge

QGS ID = 8.0 A

Gate to Drain Charge

QGD

VGS = 10 V

Diode Forward Voltage

VF(S-D) IF = 8.0 A, VGS = 0 V

Reverse Recovery Time

trr

IF = 8.0 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 100 A / µs

µ PA1804

MIN. TYP. MAX. UNIT

10 µA

±10 µA

1.0 2.1 2.5 V

3 8.7

S

18 23 mΩ

24 32 mΩ

761

pF

258

pF

99

pF

24

ns

83

ns

46

ns

29

ns

13.5

nC

2.4

nC

3.7

nC

0.86

V

27

ns

16

nC

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

RG

PG. RG = 10 Ω

VGS

0

τ

τ = 1µ s

Duty Cycle ≤ 1 %

RL

VDD

VGS

VGS

Wave Form

10 %

0

VGS(on)

ID

90 %

ID

Wave Form

0 10 %

td(on)

ID

tr

td(off)

90 %

90 %

10 %

tf

ton

toff

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D13868EJ2V0DS

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