UPA1816 查看數據表（PDF） - NEC => Renesas Technology

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UPA1816

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

µ PA1816

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

Gate Leakage Current

Gate Cut-off Voltage

Forward Transfer Admittance

Drain to Source On-state Resistance

Input Capacitance

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

RDS(on)4

Ciss

VDS = −12 V, VGS = 0 V

VGS = m 8.0 V, VDS = 0 V

VDS = −10 V, ID = −1.0 mA

VDS = −10 V, ID = −4.5 A

VGS = −4.5 V, ID = −4.5 A

VGS = −4.0 V, ID = −4.5 A

VGS = −2.5 V, ID = −4.5 A

VGS = −1.8 V, ID = −2.5 A

VDS = −10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Crss f = 1.0 MHz

td(on)

VDD = −10 V, ID = −4.5 A

tr

VGS = −4.0 V

Turn-off Delay Time

td(off)

RG = 10 Ω

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

tf

QG

VDD = −10 V

QGS

VGS = −4.0 V

QGD

ID = −9.0 A

Body Diode Forward Voltage

VF(S-D) IF = 9.0 A, VGS = 0 V

Reverse Recovery Time

trr

IF = 9.0 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 100 A/ µs

MIN. TYP. MAX. UNIT

−1.0 µA

m 10 µA

−0.45 −0.75 −1.5 V

11 22

S

12.0 15 mΩ

12.5 16 mΩ

16.2 22.5 mΩ

23.7 41.5 mΩ

1570

pF

400

pF

240

pF

16

ns

132

ns

223

ns

295

ns

15

nC

3.0

nC

4.5

nC

0.82

V

490

ns

580

nC

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

RG

PG.

VGS (−)

0

τ

τ = 1µs

Duty Cycle ≤ 1%

RL

VDD

VGS (−)

VGS

Wave Form

10%

0

90%

VGS

VDS (−)

90%

VDS

VDS

0

Wave Form

td(on)

10% 10%

tr td(off)

90%

tf

ton

toff

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = −2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet G16252EJ1V0DS

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