UPA1816 查看數據表（PDF） - NEC => Renesas Technology

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UPA1816

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

100

Pulsed

10

1

VGS = 0 V

0.1

0.01

0.4

0.6

0.8

1

1.2

VF(S-D) - Source to Drain Voltage - V

µ PA1816

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

-5

ID = −9.0 A

-4

VDD = −10 V

-3

−6.0 V

−2.0 V

-2

-1

0

0

5

10

15

20

QG - Gate Charge - nC

6

Data Sheet G16252EJ1V0DS

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