UPA1911 查看數據表（PDF） - NEC => Renesas Technology
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UPA1911 Datasheet PDF : 8 Pages
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µ PA1911
DRAIN TO SOURCE ON-STATE RESISTANCE Vs.
DRAIN CURRENT
350
VGS = −2.5 V
300
250
200
TA = 125 ˚C
75 ˚C
150
25 ˚C
100
−25 ˚C
50
0
−0.01
−0.1
−1
−10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
VGS = −4.5 V
150
TA = 125 ˚C
100
75 ˚C
25 ˚C
−25 ˚C
50
0
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
ID = −1.5 A
150
100
50
0
0
−2
−4
−6
−8
−10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
250
VGS = −4.0 V
200
150
TA = 125 ˚C
75 ˚C
100
25 ˚C
−25 ˚C
50
0
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
ID = −1.5 A
VGS = −2.5 V
150
−4.0 V
100
−4.5 V
50
0
−50
1000
0
50
100
150
Tch - Channel Temperature -˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
Ciss VGS = 0 V
100
Coss
Crss
10
−1
−10
VDS - Drain to Source Voltage - V
−100
4
Data Sheet D13455EJ1V0DS00
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