UPA1913 查看數據表（PDF） - NEC => Renesas Technology

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UPA1913

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = –20 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±12 V, VDS = 0 V

Gate Cut-off Voltage

VGS(off) VDS = –10 V, ID = –1 mA

Forward Transfer Admittance

| yfs | VDS = –10 V, ID = –2.5 A

Drain to Source On-state Resistance

RDS(on)1 VGS = –4.5 V, ID = –2.5 A

RDS(on)2 VGS = –4.0 V, ID = –2.5 A

RDS(on)3 VGS = –2.7 V, ID = –2.5 A

RDS(on)4 VGS = –2.5 V, ID = –2.5 A

Input Capacitance

Ciss

VDS = –10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = –10 V

Rise Time

tr

ID = –2.5 A

Turn-off Delay Time

td(off)

VGS(on) = –4.0 V

Fall Time

tf

RG = 10 Ω

Total Gate Charge

QG

VDD= –16 V

Gate to Source Charge

QGS ID = –4.5 A

Gate to Drain Charge

QGD VGS = –4.0 V

Diode Forward Voltage

• Reverse Recovery Time

• Reverse Recovery Charge

VF(S-D)

trr

Qrr

IF = 4.5 A, VGS = 0 V

IF = 4.5 A, VGS = 0 V

di/dt = 10 A / µs

µ PA1913

MIN. TYP. MAX. UNIT

–10 µA

±10 µA

–0.5 –1.1 –1.5 V

3 8.8

S

44 55 mΩ

46 58 mΩ

60 82 mΩ

66 90 mΩ

700

pF

208

pF

100

pF

300

ns

528

ns

242

ns

698

ns

6.0

nC

2.1

nC

2.8

nC

0.86

V

32

ns

2.2

nC

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

RG

PG.

VGS (−)

0

τ

τ = 1µs

Duty Cycle ≤ 1 %

RL

VDD

VGS (−)

VGS

Wave Form

010 %

VGS(on) 90 %

ID (−)

90 %

ID

ID

0 10 %

Wave Form

90 %

10 %

td(on) tr td(off) tf

ton

toff

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = −2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D13807EJ2V0DS00

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