UPA828TF(1999) 查看數據表（PDF） - NEC => Renesas Technology
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UPA828TF Datasheet PDF : 7 Pages
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PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA828TF
FEATURES
• LOW NOISE:
NF = 1.3 dB TYP at f = 2 GHz, VCE = 2 V, lc = 3 mA
• HIGH GAIN:
|S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 2 V, lc = 20 mA
• SMALL PACKAGE STYLE:
2 NE687 die in a 2 mm x 1.25 mm x 0.6 mm package
DESCRIPTION
The UPA828TF has two built-in low-voltage transistors which
are designed for low-noise amplification in the VHF to UHF
band. The two die are chosen from adjacent locations on the
wafer. These features combined with the pin configuration
make this device ideal for balanced or mirrored applications.
This device is suitable for low voltage/low current, and low
noise applications. The thinner package style allows for higher
density designs.
OUTLINE DIMENSIONS (Unit in mm)
Package Outline TS06 (Top View)
2.1 ± 0.1
1.25 ± 0.1
1
0.65
2.0 ± 0.2
1.3
2
3
6
0.22
+0.10
- 0.05
5 (All Leads)
4
0.6 ± 0.1
0.45
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0 ~ 0.1
0.13 ± 0.05
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA828TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
IEBO
hFE
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain1 at VCE = 2 V, IC = 20 mA
µA
µA
70
fT
Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz
GHz
9
fT
Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz
GHz
7
Cre
Feedback Capacitance2 at VCB = 2 V, IE = 0, f = 1 MHz
pF
|S21E|2
Insertion Power Gain at VCE = 2 V, IC =20 mA, f = 2 GHz
dB
7
|S21E|2
Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz
dB
6
TYP
11
9
0.4
8.5
7.5
NF
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz dB
1.3
2
NF
hFE1/hFE2
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz dB
hFE ratio,VCE = 2 V, Ic = 20 mA
hFE1 = Smaller hFE value between Q1 and Q2
hFE2 = Larger hFE value between Q1 and Q2
1.3
2
0.85
1.0
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
MAX
0.1
0.1
140
0.8
California Eastern Laboratories
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