UPA828TF(1999) 查看數據表（PDF） - NEC => Renesas Technology
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UPA828TF Datasheet PDF : 7 Pages
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UPA828TF
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
5
VCEO Collector to Emitter Voltage V
3
VEBO Emitter to Base Voltage
V
2
IC
Collector Current
mA
30
PT
Total Power Dissipation
1 Element
mW
90
2 Elements
mW
180
TJ
Junction Temperature
°C
150
TSTG Storage Temperature
°C
-65 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
2 Elements in Total
180 mW
100
Per Element
90 mW
0
50
100
150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
200 µA
180 µA
15
160 µA
140 µA
120 µA
10
100 µA
80 µA
60 µA
5
40 µA
lB = 20 µA
0
1.0
2.0
3.0
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs.
DC BASE VOLTAGE
50
VCE = 2 V
40
30
20
10
0
0.5
1.0
DC Base Voltage, VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
VCE = 2 V
100
VCE = 1 V
50
20
10
1
2
5
10 20
50 100
Collector Current, lc (mA)
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