UPA832TF-T1(1999) 查看數據表（PDF） - NEC => Renesas Technology
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UPA832TF-T1 Datasheet PDF : 9 Pages
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UPA832TF
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
Q1 Q2
VCBO Collector to Base Voltage
V
20 9
VCEO Collector to Emitter Voltage V
12 6
VEBO Emitter to Base Voltage
V
32
IC
Collector Current
mA
100 30
PT
Total Power Dissipation
mW 150 150
2002
TJ
Junction Temperature
°C
150 150
TSTG Storage Temperature
°C -65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. When operating both devices, the power dissipation for
either device should not exceed 110 mW.
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
Q1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2 elements in total
Free Air
200
Q1 when using 1 element
Q1 when using
2 elements
100
0
50
100
150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
VCE = 3 V
10
0
0.5
1.0
Base to Emitter Voltage, VBE (V)
Q2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2 elements in total
Free Air
200
Q2 when using 1 element
Q2 when using
2 elements
100
0
50
100
150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 3 V
40
30
20
10
0
0.5
1.0
Base to Emitter Voltage, VBE (V)
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