UPA832TF-T1 查看數據表（PDF） - NEC => Renesas Technology

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UPA832TF-T1

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NEC => Renesas Technology 

µPA832TF

(2) Q2

ELECTRICAL CHARACTERISTICS

PARAMETER

Collector cutoff current

Emitter cutoff current

DC current gain

Gain bandwidth product

Feedback capacitance

Insertion power gain

Noise figure

SYMBOL

ICBO

IEBO

hFE

fT

Cre

|S21e|2

NF

CONDITION

VCB = 5 V, IE = 0

VEB = 1 V, IC = 0

VCE = 3 V, IC = 10 mANote 1

VCE = 3 V, IC = 10 mA, f = 2 GHz

VCB = 3 V, IE = 0, f = 1 MHzNote 2

VCE = 3 V, IC = 10 mA, f = 2 GHz

VCE = 3 V, IC = 3 mA, f = 2 GHz

MIN.

75

7

TYP.

12

0.4

8.5

1.5

MAX.

0.1

0.1

150

0.7

2.5

UNIT

µA

µA

GHz

pF

dB

dB

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty cycle ≤ 2%

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank

Marking

hFE value of Q1

hFE value of Q2

FB

V34

100 to 145

75 to 150

3

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