UPA832TF 查看數據表（PDF） - NEC => Renesas Technology

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UPA832TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NEC => Renesas Technology 

Q1

Noise Figure vs. Collector Current

6

VCE = 3 V

f = 1 GHZ

4

2

0

0.5 1.0

5.0 10

Collector current IC (mA)

50 100

Feedback Capacitance vs. Collector to Base Voltage

5.0

f = 1 MHZ

2.0

1.0

0.5

0.2

0.1

1

2

5

10

20

50

Collector to base voltage VCB (V)

Insertion Power Gain vs. Frequency

24

VCE = 3V

IC = 7 mA

20

16

12

8

4

0

0.1 0.2

0.5 1.0 2.0

5.0

Frequency f (GHZ)

µPA832TF

Q2

Noise Figure vs. Collector Current

4

f = 2 GHz

VCE = 3 V

3

2

1

0

0.5 1

2

5 10 20

50

Collector current IC (mA)

Feedback Capacitance vs. Collector to Base Voltage

0.6

f = 1 MHz

0.5

0.4

0.3

0.2

0.5

1

2

5

10

20

Collector to base voltage VCB (V)

6

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