UPA831TC 查看數據表（PDF） - NEC => Renesas Technology
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UPA831TC
NEC => Renesas Technology
UPA831TC Datasheet PDF : 16 Pages
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µPA831TC
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Ratings
Parameter
Symbol
Unit
Q1
Q2
Collector to Base Voltage
VCBO
20
20
V
Collector to Emitter Voltage
VCEO
12
10
V
Emitter to Base Voltage
VEBO
3
1.5
V
Collector Current
Total Power Dissipation
IC
P Note
T
100
200 in 1 element
65
mA
200 in 1 element
mW
230 in 2 elements
Junction Temperature
Tj
Storage Temperature
Tstg
150
150
°C
−65 to +150
°C
Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cre
|S21e|2
NF
Conditions
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 7 mANote 1
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCB = 3 V, IE = 0, f = 1 MHzNote 2
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
MIN.
−
−
70
3.0
−
7.0
−
TYP.
−
−
−
4.5
0.7
9.0
1.2
MAX.
1.0
1.0
140
−
1.5
−
2.5
Unit
µA
µA
GHz
pF
dB
dB
Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
2
Data Sheet P14554EJ1V0DS00
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