UPA836TC 查看數據表（PDF） - NEC => Renesas Technology

零件编号

产品描述 (功能)

生产厂家

UPA836TC

NPN SILICON EPITAXIAL TWIN TRANSISTOR

NEC => Renesas Technology 

UPA836TC

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS RATINGS

Q1 Q2

VCBO Collector to Base Voltage

V

9

9

VCEO Collector to Emitter Voltage V

6

6

VEBO Emitter to Base Voltage

V

2

2

IC

Collector Current

mA

30 100

PT

Total Power Dissipation

TJ

Junction Temperature

mW TBD TBD

TBD

°C

150 150

TSTG Storage Temperature

°C -65 to +150

Note: 1. Operation in excess of any one of these parameters may

result in permanent damage.

ORDERING INFORMATION

PART NUMBER

UPA836TC-T1

QUANTITY

3000

PACKAGING

Tape & Reel

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

DATA SUBJECT TO CHANGE WITHOUT NOTICE

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