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SLN-386-TR2 查看數據表(PDF) - Stanford Microdevices

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SLN-386-TR2
Stanford-Microdevices
Stanford Microdevices Stanford-Microdevices
SLN-386-TR2 Datasheet PDF : 3 Pages
1 2 3
Product Description
Stanford Microdevices’ SLN-386 is a high performance GaAs
Heterojunction Bipolar Transistor (HBT) MMIC housed in a
low-cost 85 mil (2.2mm) diameter plastic package. This HBT
MMIC is fabricated using molecular beam epitaxial growth
technology which produces reliable and consistant
performance from wafer to wafer.
SLN-386
DC-2.5 GHz
50 Ohm LNA MMIC Amplifier
The SLN-386 needs only 2 DC-Blocking capacitors and a bias
resistor for operation. Noise figure may be optimized by
using 2-element matching at the input to yield <3.0 dB noise
figure.
This 50 Ohm LNA requires only a single supply voltage and
draws only 18mA which makes it an ideal choice for wireless
subscriber equipment including cellular, PCS, CDPD, wireless
data and pagers.
The SLN-386 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
Noise Figure vs. Frequency
5
4
dB
3
2
0.1
0.5
1
1.5
2
2.5
3
GHz
Product Features
Patented Reliable GaAs HBT Technology
Low Noise Figure : 3.4dB at 0.9GHz
High 3rd Order Intercept : +20dBm
High Associated Gain : 19dB
True 50 Ohm MMIC : No External Matching
Required
Low Cost Surface Mountable Plastic
Package
Applications
Cellular, PCS, CDPD, Wireless Data
Pagers
Electrical Specifications at Ta = 25C
Sym bol
NF
50 Ohm
P aram e te rs : Te st C on ditio n s
Z = 5 0 O hm s , Id = 1 8m A
0
N ois e F igu re in 50 O hm s
f = D C -1 .0 G H z
f = 1.0-2.5 G H z
U nits
dB
dB
M in .
Ty p .
3 .3
3 .7
M ax.
3 .8
S
21
VSW R
50 Ohm G ain
In p ut V SW R
f = D C -2 .5 G H z
f = D C -2 .5 G H z
dB
16
19
-
3 .0 :1
VSW R O utput VSW R
f = D C -1 .0 G H z
-
f = 1.0-2.5 G H z
2 .0 :1
3 .0 :1
S
Is olation
12
f = D C -1 .0 G H z
dB
35
f = 1.0-2.5 G H z
dB
25
P
1dB
O utpu t P o w e r at 1 dB C o m p re ss io n
f = D C -1 .0 G H z
f = 1.0-2.5 G H z
dBm
dBm
+ 2.5
+ 2.0
IP
T h ird O rd e r In te rce p t P o in t:
3
f = D C -1 .0 G H z
f = 1.0-2.5 G H z
dBm
+ 20 .0
+ 19 .0
Vd
D ev ice Vo lta ge
Id = 1 8 m A
V
2 .7
3 .1
3 .5
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
4-33

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