UPD16803 查看數據表（PDF） - NEC => Renesas Technology

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UPD16803

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

NEC => Renesas Technology 

µPD16803

ORDERING INFORMATION

Part Number

µPD16803GS

Package

20-pin plastic SOP (300 mil)

BLOCK DIAGRAM

0.01 µF

0.01 µF

0.01 µF

VDD C1L

C1H C2L

C2H VG

OSC

CIRCUIT

CHARGE

PUMP

Note 1

2 × VDD + VM

VM

RX

BAND GAP

REFERENCE

LEVEL CONTROL

CIRCUIT

Note 2

PS

IN1

IN2

INC

DGND

SWITCH

CIRCUIT

CONTROL

CIRCUIT

LEVEL

SHIFT

“H”

BRIDGE 1

“H”

BRIDGE 2

VM1

1A

1B

PGND

VM2

2A

2B

PGND

Note 3

Connected in diffusion layer

Notes 1. 3 × VDD where VM ≤ VDD

2. The power-saving mode is set when the PS pin goes high. In this mode, the voltage of the charge pump

circuit is lowered and the ON resistance of the H bridge driver transistor increases, limiting the current.

In the power-saving mode, the motor cannot turn.

3. It is recommended to connect an external capacitor of 0.22 µF or more between VM and GND to stabilize

the operation.

2

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