UPD16875G 查看數據表（PDF） - NEC => Renesas Technology

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UPD16875G

DUAL Pch HIGH-SIDE SWITCH FOR USB

NEC => Renesas Technology 

µPD16875

ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = 25°C)

Parameter

Input voltage

Flag voltage

Flag current

Output voltage

Output current

Control input

Total power dissipation

Operating temperature range

Junction temperatureNote

Storage temperature

Symbol

Conditions

Ratings

Unit

VIN

−0.3 to +6

V

VFLG

−0.3 to +6

V

IFLG

50

mA

VOUT

VIN+0.3

V

IOUT

DC

+0.5 (VIN = VCTL = 5 V)

A

−0.1 (VIN = 0 V, VOUT = 5 V)

Pulse width ≤ Single 100 µs pulse

+3

VCTL

−0.3 to +6

V

PD

300

mW

TA

−40 to +85

°C

TCH MAX

+150

°C

Tstg

−55 to +150

°C

Note This product has an internal thermal shutdown circuit (operating temperature: 150°C or higher TYP.)

RECOMMENDED OPERATING RANGE (Unless otherwise specified, TA = 25°C)

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

Input voltage

VIN

+4

+5.5

V

Operating temperature range

TA

0

+70

°C

ELECTRICAL SPECIFICATIONS

DC Characteristics (Unless otherwise specified, VIN = +5 V, TA = +25°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Current consumption

IDD

VCTL = VIN (Both 1 pin & 4 pin),

OUT: Open

1

5

µA

VCTL = 0 V, OUT: open

100

µA

Input voltage, low

VIL

CTL pin

1.0

V

Input voltage, high

VIH

CTL pin

2.0

V

Control input current

ICTL

VCTL = 0 V

0.01

1

µA

VCTL = VIN

0.01

1

µA

Output MOSFET on-resistance

RON

TA = 0 to +70°C,

IOUT = 500 mA

100

140

mΩ

Output leakage current

IO LEAK

10

µA

Overcurrent detector threshold

ITH

TA = 0 to +70°C

0.6

0.9

1.25

A

Flag output resistance

RON F

IL = 10 mA

10

25

Ω

Flag leakage current

IO LEAK F

VFLAG = 5 V

0.01

1

µA

Undervoltage lockout circuit

operating voltage

VUVLO

VIN: When rising

VIN: When falling

2.2

2.5

2.8

V

2.0

2.3

2.6

V

Hysteresis width

0.05

0.25

V

4

Data Sheet S13895EJ1V0DS

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