UPD5702 查看數據表（PDF） - California Eastern Laboratories.

零件编号

产品描述 (功能)

生产厂家

UPD5702

NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER

California Eastern Laboratories. 

UPD5702TU

ABSOLUTE MAXIMUM RATINGS1

(TA = 25°C unless otherwise specified)

SYMBOLS

VDS

VGS

PD

TA

TSTG

PIN(MAX)

Tj

PARAMETERS

UNITS

Supply Voltage 1

V

Supply Voltage 2

V

Power Dissipation2

W

Operating Ambient Temp. °C

Storage Temp. Range

°C

Maximum Input Level

dBm

Junction Temperature

°C

RATINGS

6.0

6.0

0.866

-40 to +85

-65 to +150

+10

+150

Notes:

1. Operation in excess of any one of these conditions may

result in permanent damage.

2. TA = 25°C, mounted on 330 x 21 mm epoxy glass PWB.

RECOMMENDED

OPERATING CONDITIONS

SYMBOLS

PARAMETERS

UNITS MIN TYP MAX

VDS Supply Voltage 1

V 2.7 3.0 3.6

VGS Supply Voltage 2

V 0.0 0.2 –

PIN Maximum Input Power

dBm – +5 –

ID

Drain Current

mA – 165 –

ORDERING INFORMATION

PART NUMBER

QUANTITY

UPD5702TU-E2-A

TBD

TYPICAL PERFORMANCE CURVES (TA = 25°C, f = 1.9 GHz, VGS = 2.0 V unless otherwise specified)

OUTPUT POWER, GAIN AND

ADJACENT CHANNEL POWER

vs. INPUT POWER

30

-20

VDS = 3.0 V,

VGS = 2.0 V,

f = 1.90 GHz,

25

PIN = -5 dB -30

20

-40

15

-50

10

5

0

-15

-60

Pout

Gain

Padj (-900 KHz) -70

Padj (-600 KHz)

Padj (+600 KHz)

-10

-5

Padj (+900 KHz)

-80

0

5

10

Input Power, PIN (dBm)

CIRCUIT CURRENT

vs. INPUT POWER

250

200

150

100

50

0

-15

-10

-5

0

5

10

Input Power, PIN (dBm)

Share Link: