UT2327G(2015) 查看數據表（PDF） - Unisonic Technologies

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UT2327G
(Rev.:2015)

P-CHANNEL ENHANCEMENT MODE

Unisonic Technologies 

UT2327

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Drain-Source Voltage

Gate-Source Voltage

VDS

- 20

V

VGS

± 12

V

Continuous Drain Current (Note 3)

TA=25°C

TA=70°C

ID

-2.6

A

-2.1

A

Pulsed Drain Current (Note 1, 2)

IDM

-10

A

Total Power Dissipation (TA=25°C)

PD

1.38

W

Junction Temperature

Storage Temperature

TJ

+150

°C

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA

PARAMETER

Junction to Ambient (Note 3)

SYMBOL

θJA

RATING

90

 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

UNIT

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=-250uA

-20

Drain-Source Leakage Current

TJ=25°C

TJ=70°C

IDSS

VDS=-20V, VGS=0V

VDS=-16V, VGS=0V

Gate-Source Leakage Current

IGSS

VGS=±12V

Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25℃, ID=-1mA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=-250uA

-0.5

Drain-Source On-State Resistance (Note 2)

RDS(ON)

VGS=-5V, ID=-2.8A

VGS=-2.8V, ID=-2.0A

Forward Transconductance

gFS

VDS=-5V, ID=-2.8A

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VGS=0V, VDS=-6V, f=1.0MHz

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

Turn-ON Rise Time

Turn-OFF Delay Time

Turn-OFF Fall Time

Total Gate Charge (Note 2)

Gate-Source Charge

Gate-Drain Charge

tD(ON)

tR

tD(OFF)

tF

QG

QGS

QGD

VDS=-15V, VGS=-10V,

ID=-1A, RG=6Ω, RD=15Ω

VDS=-6V, VGS=-5V, ID=-2.8A

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

TJ=25℃, IS=-1.6A, VGS=0V

Maximum Continuous Drain-Source Diode

Forward Current

IS

VD=VG=0V, VS=-1.2V

Maximum Pulsed Drain-Source Diode

Forward Current (Note 1)

ISM

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min.

TYP

-0.1

4.4

295

170

65

5.2

9.7

19

29

5.2

1.36

0.6

MAX

-1

-10

±100

130

190

10

-1.2

-1

-10

UNIT

V

uA

uA

nA

V/°C

V

mΩ

mΩ

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

A

A

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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