UT12N10L-TN3-R(2011) 查看數據表（PDF） - Unisonic Technologies
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UT12N10L-TN3-R Datasheet PDF : 4 Pages
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UT12N10
Preliminary
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
Pulsed (Note 1)
IDM
12
A
44
A
Power Dissipation
PD
43
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Note:1 Repetitive Rating: Pulse width limited by maximum junction temperature
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 2)
θJA
50
°C/W
Junction to Case
θJC
3.5
°C/W
Note: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
θJC is guaranteed by design while θJA is determined by the user’s board design.
Note:2 When mounted on a 1 in2 pad of 2 oz copper
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-508.b
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