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UT54ACS164245SCC 查看數據表(PDF) - Aeroflex Corporation

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UT54ACS164245SCC Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Ptotal1 Power dissipation5,7, 8
CL = 50pF
VDD from 4.5 to 5.5
2.0
mW/
MHz
Ptotal2 Power dissipation5, 7, 8
CL = 50pF
VDD from 3.00 to 3.6
1.5
mW/
MHz
IDD
Standby Supply Current VDD1 or VDD2 VIN = VDD or VSS
Pre-Rad 25oC
VDD = 5.5
OE=VDD
Pre-Rad -55oC to +125oC
OE=VDD
Post-Rad 25oC
OE=VDD
10
µA
100
µA
500
µA
CIN
Input capacitance 9
ƒ = 1MHz @ 0V
VDD from 3.00 to 5.5
15
pF
COUT Output capacitance9
ƒ = 1MHz @ 0V
VDD from 3.00 to 5.5
15
pF
Notes:
1. All specifications valid for radiation dose 1E5 rad(Si) per MIL-STD-883, Method 1019.
2. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V IH = VIH (min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within th e above specified range, but
are guaranteed to VIH (min) and VIL (max).
3. All combinations of OEx and DIRx
4. Per MIL-PRF-38535, for current density 5.0E5 amps/cm 2, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF-MHz.
5. Guaranteed by characterization.
6. Not more than one output may be shorted at a time for maximum duration of one second.
7. Power does not include power contribution of any CMOS output sink current.
8. Power dissipation specified per switching output.
9.Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
10 .Guaranteed; tested on a sample of pins per device.
11. Supplied as a design limit, but not guaranteed or tested.
.
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