UTC2SA1020 查看數據表（PDF） - Unisonic Technologies

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UTC2SA1020

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR

VCE(sat)-Ic

-1

COMMON EMITTER

-0.5

IC/IB=20

I(tot)

-0.3

mA

Ta=100℃

-0.1

-0.05

-0.03

-55℃

25℃

VCE(sat)-Ic

-10

COMMON EMITTER

-5

IC/IB=20

I(tot)

-3

mA

-1

-55℃

-0.5

Ta=100℃ 25℃

-0.3

-0.01

-0.005 -0.01 -0.03 -0.1 -0.3 -1 -3

Collector Current IC(A)

Ic -VBE

-2.0

COMMON EMITTER

VCE=-2V

I(tot)

-1.5

mA

Ta=100℃

-55℃

-1.0

25℃

-0.5

0

0

-0.4 -0.8

-1.2 -1.6

Base Emitter Voltage VBE(V)

-0.1

-0.005 -0.01 -0.03 -0.1 -0.3 -1 -3

Collector Current IC(A)

1.2

1

1.0

0.8

Pc-Ta

1.Mounted on Ceramic

Substrate (250mm2*0.8t)

I(t2o.tT) a=25℃

mA

0.6

2

0.4

0.2

0

0 20 40 60 80 100 120 140 160

Ambient Temperature Ta℃

Safe Operation Area

-5

-3

-1

-0.5

Ic max.(pulsed)*

Ic max.(pulsed)*

100ms*

1s*

10ms*

1ms*

-0.3 DC OPERATION

Ta=25℃

-0.1

-0.05

-0.03

-0.01

*Single nonrepetitive pulse

Ta=25℃

Curves must be derated

linearly with increase

in temperature

VCEO MAX

-0.3 -1 -3 -10 -30 -100

Collector Emitter Voltage VCE (V)

UTC UNISONIC TECHNOLOGIES CO. LTD 3

QW-R208-021,A

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