VID125-12P1 查看數據表（PDF） - IXYS CORPORATION
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VID125-12P1 Datasheet PDF : 4 Pages
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VID 125-12P1
VIO125-12P1 VDI 125-12P1
40
mJ
30
Eon
20
160
Eon
td(on)
ns
120
t
tr
80
10
0
0
Fig. 7
VCE = 600V
VGE = ±15V 40
RG = 15Ω
TJ = 125°C
0 121T120
50
100
150 A
IC
Typ. turn on energy and switching
times versus collector current
25
mJ
20
Eon
15
VCE = 600V
VGE = ±15V
IC = 75A
TJ = 125°C
10
td(on)
200
ns
Eon
160
t
120
tr 80
5
40
0
08
Fig. 9
0 121T120
16 24 32 40 48 Ω 56
RG
Typ. turn on energy and switching
times versus gate resistor
200
A
160
ICM
120
80
40
RG = 15Ω
TJ = 125°C
VCEK < VCES
0
121T120
0 200 400 600 800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
20
mJ
Eoff 15
Eoff
td(off)
800
ns
600
t
10
400
VCE = 600V
VGE = ±15V
5
RG = 15Ω 200
TJ = 125°C
0
0
Fig. 8
t 121T120 f
0
50
100
150 A
IC
Typ. turn off energy and switching
times versus collector current
B3
25
mJ
20
Eoff
15
VCE = 600V
VGE = ±15V
IC = 75A
TJ = 125°C
10
2000
ns
td(off)
1600
t
1200
Eoff
800
5
400
121T120
0
tf 0
0 8 16 24 32 40 48 Ω 56
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0,1
ZthJC
0,01
diode
IGBT
0,001
0,0001
single pulse
0,00001
0,00001 0,0001 0,001
0,01
VID...125-12P1
0,1 s 1
t
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
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