VG26S17400EJ-5 查看數據表（PDF） - Vanguard International Semiconductor

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VG26S17400EJ-5

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor 

VIS

DC Characteristics; 5 - Volt verion

(Ta= 0 to 70°C, VCC = + 5V±10%, Vss = 0V)

Parameter

Symbol

Test Conditions

Operating

current

Low

power

S - version

Standby Standard

Current power

version

RAS - only

refresh current

Fast page mode

current

CAS - before - RAS

refresh current

Self - refresh currant

(S - Version)

CAS - before - RAS

long refresh

current (S - Version)

RAS cycling

ICC1 CAS cycling

tRC = min.

TTL interface

RAS, CAS = VIH

Dout = high - Z

CMOS interface

RAS, CAS ≥ VCC - 0.2V

Dout = high - Z

ICC2 TTL interface

RAS, CAS = VIH

Dout = high - Z

CMOS interface

RAS, CAS ≥ VCC - 0.2V

Dout = high - Z

ICC3 RAS cycling, CAS = VIH

tRC = min.

ICC4

tPC = min.

ICC5 tRC = min.

RAS, CAS cycling

ICC8 tRASS ≥ 100µS

ICC9 Standby : VCC - 0.2V ≤ RAS

CAS before RAS refresh :

2048 cycles/128ms

RAS, RAS : 0V ≤ VIL ≤ 0.2V

VCC - 0.2V ≤ VIH ≤ VIH (Max)

Dout = high - Z, tRAS ≤ 300ns

VG26(V)(S)17400E

4,194,304 x 4 - Bit

CMOS Dynamic RAM

VG26 (V) (S) 17400E

-5

-6

Unit Notes

Min Max Min Max

- 110 - 100 mA 1, 2

-2-2

mA

- 0.25

- 0.25

mA

-2-2

mA

-1-1

mA

- 110

- 80

- 110

- 350

- 500

- 100

1, 2

mA

- 70

1,3

mA

- 100

1, 2

mA

- 350 µA

- 500 µA

Document : 1G5-0142

Rev.1

Page 6

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