CGY2021G 查看數據表（PDF） - Philips Electronics
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CGY2021G Datasheet PDF : 12 Pages
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Philips Semiconductors
DCS/PCS 2 W power amplifier
Preliminary specification
CGY2021G
AC CHARACTERISTICS
VDD = 4.5 V; Tamb = 25 °C; general operating conditions applied; unless otherwise specified.
Measured and guaranteed on CGY2021G evaluation board.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Power amplifier
Pi
S11
fRF
Po(max)
η
RS
CS
Po(off)
NRX
H2
H3
Stab
input power
−2
−
input return loss
50 Ω source; note 1
−
−
RF frequency range
DCS
1710 −
PCS
1850 −
maximum output power
Tamb = 25 °C; VDD = 4.5 V
33
34
Tamb = −20 to +85 °C; VDD = 4.2 V 31
−
efficiency
DCS; at Po(max)
40
50
PCS; at Po(max)
optimum series load resistance
−
47
−
6
optimum series load
capacitance
−
11
isolation
PA OFF; Pi = 0 dBm
−
−50
output noise in RX band
−
−
2nd harmonic level
−
−40
3rd harmonic level
−
−35
stability
note 2
−
−
Power sensor driver
Po(DET) sensor driver output power
RL = 100 Ω; relative to PA output −
−25
power into 50 Ω load
+2
−10
1 785
1 910
−
−
−
−
−
−
dBm
dB
MHz
MHz
dBm
dBm
%
%
Ω
pF
−
−121
−
−
−50
dBm
dBm/Hz
dBc
dBc
dBc
−
dBc
Notes
1. Including the 82 Ω resistor connected in parallel at the power amplifier input on the evaluation board.
2. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1
load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied
360 electrical degrees during a 60 seconds test period.
1997 Apr 03
7
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