VLA503 查看數據表（PDF） - Powerex
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VLA503 Datasheet PDF : 6 Pages
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
VLA503
Hybrid IC IGBT Gate Driver
Application Circuit
+5V
B1
CONTROL
FAULT
14
13
+
VCC
+
VEE
10
PS2501
VLA503
9
8
6
5
+ C1
4.7k
4
3
+
C2
2
1
+
Ctrip
D1
30V
C
RG
IGBT
18V
MODULE
18V
G
E
E
Component Selection:
Design
Description
VCC, VEE
RG
+15V/-10V Typical, See data sheet for usable limits
Adjust for application requirements. See IGBT module application notes
for recommendations and power rating
C1, C2
10µF-100µF 25V low impedance electrolytic
D1
Ctrip
B1
Ultra fast recovery trr<100ns, High voltage Vrrm>Vces(IGBT)
0-200pF adjusts desaturation trip time (ttrip)
CMOS Buffer 74HC04 or similar – Must actively pull high to maintain noise immunity
Notes:
(1) Power supply decoupling capacitors C1 and C2 should be connected as close as possible to the pins of the
gate driver and must be sized to have appropriate ESR and ripple current capability for the IGBT being driven.
(2) Ctrip should be connected as close as possible to the pins of the gate driver to avoid noise pick-up.
(3) All zener diodes 1W, all resistors 0.25W unless otherwise noted.
Single Supply Operation
+5V
B1
CONTROL
FAULT
14
13
+
VCC
10
PS2501
2.7k
8.2V
VLA503
9
8
6
5
+ C1
4.7k
4
3
+
C2
2
1
+
Ctrip
D1
30V
C
RG
IGBT
18V
MODULE
18V
G
E
E
Rev. 2/06
3
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