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CGY2032BTS 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
生产厂家
CGY2032BTS
Philips
Philips Electronics Philips
CGY2032BTS Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
DECT 500 mW power amplifier
Preliminary specification
CGY2032BTS
FEATURES
Power Amplifier (PA) overall efficiency 55%
27.5 dBm saturated output power at 3.2 V
0 dBm input power
40 dB linear gain
Operation without negative supply
Wide operating temperature range 30 to +85 °C
SSOP16 package.
APPLICATIONS
1.88 to 1.9 GHz transceivers for DECT applications
2 GHz transceivers: Personal Handy phone System
(PHS), Digital Cellular System (DCS) and Personal
Communication Services (PCS).
GENERAL DESCRIPTION
The CGY2032BTS is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate from 3.6 V battery supply.
No negative supply voltage is required for operation.
QUICK REFERENCE DATA
SYMBOL
VDD
IDD
Po
Tamb
PARAMETER(1)
positive supply voltage
total drain current
output power
ambient temperature
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
MIN.
30
TYP.
3.2
350
27.5
MAX. UNIT
V
mA
dBm
+85 °C
ORDERING INFORMATION
TYPE
NUMBER
CGY2032BTS
NAME
SSOP16
PACKAGE
DESCRIPTION
plastic shrink small outline package; 16 leads; body width 4.4 mm
VERSION
SOT369-1
BLOCK DIAGRAM
2000 Mar 14
handbook, halfpage VDD1 VDD2 VDD3
8
5
1
CGY2032BTS
11
16
RFI
15
2, 3, 4
9,10 6, 7 12, 13, 14
GND1 GND2 GND3
FCA080
RFO
OPM
Fig.1 Block diagram.
2

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