VNP14N04 查看數據表（PDF） - STMicroelectronics
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VNP14N04 Datasheet PDF : 11 Pages
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VNP14N04
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (Vin = 0)
Internally Clamped
V
Vin Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC Output Current
-14
A
Vesd Electrostatic Discharge (C= 100 pF, R=1.5 KΩ)
2000
V
Ptot Total Dissipation at Tc = 25 oC
50
W
Tj
Operating Junction Temperature
Internally Limited
oC
Tc Case Operating Temperature
) Tstg Storage Temperature
Internally Limited
oC
-55 to 150
oC
ct(s THERMAL DATA
du Rthj-case Thermal Resistance Junction-case
ro ) Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.5
62.5
oC/W
oC/W
te P ct(s ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
le du OFF
so ro Symbol
b P VCLAMP
) - O lete VCLTH
t(s so VINCL
uc Ob IDSS
Prod t(s) - IISS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (Vin = 0)
Supply Current from
Input Pin
Test Conditions
ID = 200 mA Vin = 0
ID = 2 mA Vin = 0
Iin = -1 mA
VDS = 13 V Vin = 0
VDS = 25 V Vin = 0
VDS = 0 V Vin = 10 V
Min.
36
Typ.
42
35
-1
250
Max.
48
-0.3
50
200
500
Unit
V
V
V
µA
µA
µA
lete duc ON (∗)
so ro Symbol
b P VIN(th)
O olete RDS(on)
Parameter
Input Threshold
Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = Vin ID + Iin = 1 mA
Vin = 10 V ID = 7 A
Vin = 5 V ID = 7 A
Min.
0.8
Typ.
Max.
3
Unit
V
0.07
Ω
0.1
Ω
Obs DYNAMIC
Symbol
gfs (∗)
C oss
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
VDS = 13 V ID = 7 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
8
Typ.
10
Max.
Unit
S
400 500 pF
2/11
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