VNP14N04 查看數據表（PDF） - STMicroelectronics
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VNP14N04 Datasheet PDF : 11 Pages
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VNP14N04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 15 V
Vgen = 10 V
(see figure 3)
Id = 7 A
Rgen = 10 Ω
60
120
ns
160 300
ns
250 400
ns
100 200
ns
td(on) Turn-on Delay Time
VDD = 15 V
Id = 7 A
300 500
ns
tr
Rise Time
Vgen = 10 V
Rgen = 1000 Ω
1.5
2.2
µs
td(off) Turn-off Delay Time
(see figure 3)
5.5
7.5
µs
tf
Fall Time
1.8
2.5
µs
(di/dt)on
t(s) Qi
Turn-on Current Slope
Total Input Charge
VDD = 15 V
Vin = 10 V
VDD = 12 V
ID = 7 A
Rgen = 10 Ω
ID = 7 A Vin = 10 V
120
A/µs
30
nC
uc SOURCE DRAIN DIODE
rod ) Symbol
Parameter
P t(s VSD (∗) Forward On Voltage
te c trr (∗∗)
sole rodu Qrr (∗∗)
- Ob te P IRRM (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 7 A Vin = 0
ISD = 7 A di/dt = 100 A/µs
VDD = 30 V Tj = 25 oC
(see test circuit, figure 5)
Min.
Typ.
110
0.34
6.1
Max.
1.6
Unit
V
ns
µC
A
) le PROTECTION
ct(s bso Symbol
Parameter
Test Conditions
du - O Ilim
Drain Current Limit
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
ro ) tdlim (∗∗) Step Response
P t(s Current Limit
Vin = 10 V
Vin = 5 V
te c Tjsh (∗∗) Overtemperature
le u Shutdown
so rod Tjrs (∗∗) Overtemperature Reset
b P Igf (∗∗) Fault Sink Current
Vin = 10 V VDS = 13 V
Vin = 5 V VDS = 13 V
O te Eas (∗∗) Single Pulse
starting Tj = 25 oC VDD = 20 V
leAvalanche Energy
Vin = 10 V Rgen = 1 KΩ L = 10 mH
o (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Obs (∗∗) Parameters guaranteed by design/characterization
Min.
10
10
150
135
0.65
Typ.
14
14
30
80
50
20
Max.
20
20
60
150
Unit
A
A
µs
µs
oC
oC
mA
mA
J
3/11
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