VND3NV04-1 查看數據表（PDF） - STMicroelectronics

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VND3NV04-1

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

VNN3NV04, VNS3NV04, VND3NV04, VND3NV04-1

Electrical specifications

2.2

Thermal data

Table 3. Thermal data

Symbol

Parameter

Value

Unit

SOT-223 SO-8 DPAK IPAK

Rthj-case Thermal resistance junction-case max

18

3.5

3.5 °C/W

Rthj-lead

Rthj-amb

Thermal resistance junction-lead max

Thermal resistance junction-ambient max

70(1)

15

65(1)

54(1)

°C/W

100 °C/W

1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 mm thick) connected to all DRAIN

pins.

2.3

Electrical characteristics

-40 °C < Tj < 150 °C, unless otherwise specified.

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Off

VCLAMP

VCLTH

VINTH

IISS

VINCL

IDSS

On

Drain-source clamp

voltage

VIN=0 V; ID=1.5 A

Drain-source clamp

threshold voltage

VIN=0 V; ID=2 mA

Input threshold voltage VDS=VIN; ID=1 mA

Supply current from input

pin

VDS=0 V; VIN=5 V

Input-source clamp

voltage

Zero input voltage drain

current (VIN=0 V)

IIN=1 mA

IIN=-1 mA

VDS=13 V; VIN=0 V; Tj=25 °C

VDS=25 V; VIN=0 V

RDS(on)

Static drain-source on

resistance

VIN=5 V; ID=1.5 A; Tj=25 °C

VIN=5 V; ID=1.5 A

Dynamic (Tj=25 °C, unless otherwise specified)

gfs (1)

Forward

transconductance

VDD=13 V; ID=1.5 A

COSS Output capacitance

VDS=13 V; f=1 MHz; VIN=0 V

Switching (Tj=25 °C, unless otherwise specified)

Min Typ Max Unit

40

45 55

V

36

V

0.5

2.5 V

100 150 µA

6

6.8

8

V

-1.0

-0.3

30

µA

75

120

mΩ

240

5.0

S

150

pF

Doc ID 7382 Rev 2

7/26

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