VQ1001J 查看數據表（PDF） - Vishay Semiconductors

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VQ1001J

Quad N-Channel 30-V (D-S) MOSFETs

Vishay Semiconductors 

VQ1001J/P

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Currentb

Drain-Source On-Resistanceb

Forward Transconductanceb

Dynamic

V(BR)DSS

VGS(th)

IGSS

IDSS

ID(on)

rDS(on)

gfs

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 1 mA

VDS = 0 V, VGS = "16 V

TJ = 125_C

VDS = 30 V, VGS = 0 V

VDS = 24 V, VGS = 0 V, TJ = 125_C

VDS = 10 V, VGS = 12 V

VGS = 5 V, ID = 0.2 A

VGS = 12 V, ID = 1 A

TJ = 125_C

VDS = 10 V, ID = 0.5 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switchingc

Ciss

Coss

Crss

VDS = 15 V, VGS = 0 V, f = 1 MHz

Turn-On Time

Turn-Off Time

tON

tOFF

VDD = 15 V, RL = 23 W, ID ^ 0.6 A

VGEN = 10 V, RG = 25 W

Notes

a. For DESIGN AID ONLY, not subject to production testing.

b. Pulse test: PW v300 ms duty cycle v2%.

c. Switching time is essentially independent of operating temperature.

Min

30

0.8

2

200

Limits

Typa

Max

45

1.5

2.5

"100

"500

10

500

3.5

1.2

1.75

0.8

1

1.5

2

500

38

110

33

110

8

35

9

30

14

30

Unit

V

nA

mA

A

W

mS

pF

ns

VNDQ03

www.vishay.com

11-2

Document Number: 70219

S-04279—Rev. D, 16-Jul-01

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