VQ1001J 查看數據表（PDF） - Vishay Semiconductors
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VQ1001J Datasheet PDF : 4 Pages
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VQ1001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
VDS = 10 V
TJ = 150_C
1
Capacitance
120
VGS = 0 V
100
f = 1 MHz
80
100_C
0.1
25_C
–55_C
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VGS – Gate-to-Source Voltage (V)
60
40
Ciss
Coss
20
Crss
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Gate Charge
6
ID = 1 A
5
Load Condition Effects on Switching
100
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
4
VDS = 15 V
3
24 V
2
1
10
td(on)
tr
td(off)
tf
0
0
80
160
240
320
400
Qg – Total Gate Charge (pC)
Drive Resistance Effects on Switching
100
VDD = 25 V
RL = 24 W
VGS = 0 to 10 V
ID = 1 A
10
1
10
www.vishay.com
11-4
td(on)
td(off)
tf
tr
50
100
RG – Gate Resistance ( W)
1
0.1
500
400
300
1
10
ID – Drain Current (A)
Transconductance
TJ = –55_C
25_C
150_C
200
100
0
0
VDS = 7.5 V
300 ms, 1% Duty Cycle
Pulse Test
100
200
300
400
500
ID – Drain Current (mA)
Document Number: 70219
S-04279—Rev. D, 16-Jul-01
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