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VSC7122 查看數據表(PDF) - Vitesse Semiconductor

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VSC7122 Datasheet PDF : 12 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Quad Port Bypass Circuit for 1.0625 Gbit/sec
Fibre Channel Arbitrated Loop Disk Arrays
Advance Product Information
VSC7122
Table 2: AC Characteristics (Over recommended operating conditions).
Parameters
T1
T2
TSDR, TSDF
Description
Flow-Through Propagation Delay
Rising Edge to Rising Edge
Flow through Propagation Delay
Falling Edge to Falling Edge
Serial data rise and fall time
Min.
Max.
7.0
7.0
300
Units
ns
ns
ps.
Conditions
Delay with all circuits bypassed. 75
Ohm Load
Delay with all circuits bypassed. 75
Ohm load.
20% to 80%, tested on a sample basis
Table 3: DC Characteristics (Over recommended operating conditions).
Parameters
VIH(TTL)
VIL(TTL)
IIH(TTL)
IIL(TTL)
VDD
IDD
PD
VIN
VOUT50
VOUT75
Description
Min
Typ
Max
Units
Conditions
Input HIGH voltage (SEL - TTL)
Input LOW voltage (SEL - TTL)
2.0 — 5.5
0
— 0.8
V
IIH < 6.6 mA @ VIH = 5.5 V
V
Input HIGH current (SEL- TTL)
Input LOW current (SEL - TTL)
— 50 500
µA
VIN = 2.4 V
— -500
µA
VIN = 0.5 V
Supply voltage
3.10 — 3.50
V
VDD = 3.30V + 5%
Supply current
— 150
mA Outputs open, VDD = VDD max
Power Dissipation
0.35 0.5
W
Outputs open, VDD = VDD max
Receiver differential peak-to-peak
Input Sensitivity, IN+/- & L_SIn+/-
300
2600
mVp-p
AC Coupled.
Internally biased at VDD/2
Output differential peak-to-peak
voltage swing
1000 — 2200 mVp-p 50to VDD – 2.0 V
Output differential peak-to-peak
voltage swing
1200
2200 mVp-p 75to VDD – 2.0 V
Page 4
© VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
G52155-0, Rev. 2.1
8/31/98

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