VSC7135 查看數據表（PDF） - Vitesse Semiconductor

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VSC7135

1.25Gbits/sec Gigabit Ethernet Transceiver

Vitesse Semiconductor 

VITESSE

SEMICONDUCTOR CORPORATION

1.25Gbits/sec

Gigabit Ethernet Transceiver

Data Sheet

VSC7135

DC Characteristics (Over recommended operating conditions).

Parameters

Description

Min Typ Max Units

VOH

Output HIGH voltage (TTL) 2.4

—

—

V

VOL

Output LOW voltage (TTL)

—

—

0.5

V

∆VOUT751

TX Output differential peak-

to-peak voltage swing

1200

—

2200 mVp-p

∆VOUT501

TX Output differential peak-

to-peak voltage swing

1200

—

2200 mVp-p

∆VIN1

Receiver differential peak-to-

peak Input Sensitivity RX

400

— 3200 mVp-p

VIH

VIL

IIH

IIL

VDD

Input HIGH voltage (TTL)

2.0

—

5.5

V

Input LOW voltage (TTL)

0

—

0.8

V

Input HIGH current (TTL)

—

50

500

µA

Input LOW current (TTL)

—

— -500

µA

Supply voltage

3.14

—

3.47

V

PD

Power dissipation

—

625 900

mW

IDD

Supply Current

—

190 260

mA

Note: (1) Refer to Application Note, AN-37, for differential measurement techniques.

Conditions

IOH = -1.0 mA

IOL = +1.0 mA

75Ω to VDD – 2.0 V

(TX+ - TX-)

50Ω to VDD – 2.0 V

(TX+ - TX-)

Internally biased to Vdd/2

(RX+ - RX-)

—

VIN =2.4V

VIN =0.5V

3.3V±5%

Outputs open,

VDD = VDD max

Outputs open,

VDD = VDD max

Absolute Maximum Ratings (1)

Power Supply Voltage, (VDD) ............................................................................................................ -0.5V to +4V

DC Input Voltage (PECL inputs) ............................................................................................ -0.5V to VDD +0.5V

DC Input Voltage (TTL inputs)......................................................................................................... -0.5V to 5.5V

DC Output Voltage (TTL Outputs) ........................................................................................ -0.5V to VDD + 0.5V

Output Current (TTL Outputs) ................................................................................................................ +/-50mA

Output Current (PECL Outputs) ............................................................................................................... +/-50mA

Case Temperature Under Bias......................................................................................................... -55o to +125oC

Storage Temperature .................................................................................................................... -65oC to +150oC

Maximum Input ESD (Human Body Model) .............................................................................................. 1500 V

Recommended Operating Conditions

Power Supply Voltage, (VDD) ................................................................................................................ +3.3V+5%

Operating Temperature Range ............................................................. 0oC Ambient to +95oC Case Temperature

Notes:

(1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-

manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may

affect device reliability.

Page 8

© VITESSE SEMICONDUCTOR CORPORATION

741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896

G52146-0, Rev. 4.0

5/28/98

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