VSC7710 查看數據表（PDF） - Vitesse Semiconductor

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VSC7710

Photodetector/Transimpedance Amplifier Family for Optical Communication

Vitesse Semiconductor 

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7710

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Thermal Resistance Calculation

In order to relate the junction temperature to an equivalent case temperature, the following thermal charac-

teristics of the package are provided (note that the thermal conductivity is identical for TO-46 and TO-56 pack-

age styles).

Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages.

Chip Size

Chip Area A

Die height (Tdie)

Epoxy thickness (Tepoxy)

Header thickness (Theader)

(ave. for TO-46 and TO-56)

0.168cm x 0.104cm

0.015 cm2

0.066 cm

0.0076 cm

0.115 cm

K GaAs

K epoxy

K kovar

Thermal Conductivities

0.55W / cm °C

0.0186W / cm °C

0.17W / cm °C

Thermal Path

TJ

θGaAs

θEXPOXY

θKOVAR

TC

θGaAs = Tdie =

0.066

= 8 °C/W

KGaAsA

0.55 x 0.015

θepoxy = Tepoxy =

0.0076

= 27.24 °C/W

KepoxyA 0.0186 x 0.015

θkovar = Tkovar =

0.12

= 47 °C/W

KkovarA

0.17 x 0.015

θJC = Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W

Example:

For VSC7710 at nominal supply current of 25mA and VDD = 5V

Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C

G52139-0, Rev 2.2

04/02/01

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