VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7923
SONET/SDH 2.5Gb/s Laser Diode Driver
Table 5: Power Dissipation
Symbol
IVSS
Parameter
Power Supply Current (VSS)
PD
Total Power Dissipation
PDMAX Maximum Power Dissipation
Min Typ Max Units
Conditions
—
—
220
mA VSS = -5.5V, IMOD = IBIAS = 0mA
—
—
1210
mW
VSS = -5.5V, IMOD = IBIAS = 0mA,
RLOAD = 25Ω to GND
—
—
1815
mW
VSS = -5.5V, IMOD = 60mA,
IBIAS = 50mA, IOUT = 0V
Table 6: Laser Driver DC Electrical Specifications
Symbol
Parameter
Min Typ
IBIAS
IMOD
Programmable Laser Bias Current
Programmable Modulation Current
2
—
2
—
VIB
Laser Bias Control Voltage
—
—
VIP
VOCM
Laser Modulation Control Voltage
Output Voltage Compliance
—
—
GND -
2.2V
—
Max
50
60
VSS +
2.1
VSS +
2.1
Units
mA —
mA —
Conditions
V IBIAS = 50mA
V IMOD= 60mA
—
V VSS = -5.2V
Table 7: Laser Driver AC Electrical Specifications
Symbol
Parameter
Min Typ
tR, tF
Output Rise and Fall Times
—
—
Max
100
Units
ps
Conditions
25Ω load, 20%-80%,
15mA < IMOD < 60mA,
IBIAS = 20mA
Table 8: Package Thermal Specifications
Symbol
Parameter
Min Typ Max Units
Conditions
θJCC
Thermal Resistance from Junction-to-Case —
25
— °C/W Ceramic Package
θJCMG Thermal Resistance from Junction-to-Case —
32
— °C/W Metal Glass Package
G52203-0, Rev 3.0
05/11/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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