VSC7924KF 查看數據表（PDF） - Vitesse Semiconductor
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VSC7924KF Datasheet PDF : 12 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
SONET/SDH 2.5Gb/s Laser Diode Driver
Preliminary Data Sheet
VSC7924
Table 1: Signal Pin Reference
Signal
DIN
MK, NMK
NIOUT
IOUT
VSS
GND
VIP
MIP
VIB
MIB
VREF
TERM
Total Pins
Type
In
Out
Out
Out
Pwr
Pwr
In
In
In
In
In
In
Level
ECL
ECL
Pwr
Pwr
DC
DC
DC
DC
DC
DC
# Pins
1
2
1
1
5
8
1
1
1
1
1
1
24
Description
Data Input
Data Density Differential Outputs
Laser Modulation Current Output (Complementary)
Laser Modulation Current Output (To Laser Cathode))
Negative Voltage Rail
Positive Voltage Rail
Modulation Gate Node
Modulation Source Node
Bias Gate Node
Bias Source Node
Data Input Reference
Data Input Reference
Table 2: Absolute Maximum Ratings
Symbol
VSS
TJ
TSTG
Rating
Negative Power Supply Voltage
Maximum Junction Temperature
Storage Temperature
Limit
VCC to -6.0V
-55°C to + 125°C
-65°C to +150°C
Table 3: ECL Input and Outputs
Symbol
VIN
VOH
VOL
Parameter
Input Voltage Swing
ECL Output High Voltage
ECL Output Low Voltage
Min Typ Max Units
Conditions
300
-1200
-2000
800 mV Peak-to-peak, VREF = -1.3V
-700 mV 50Ω to -2.0V
-1600 mV 50Ω to -2.0V
Table 4: Recommended Operating Conditions
Symbol
GND
VSS
TCl
TJ
Parameter
Positive Voltage Rail
Negative Voltage Rail
Operational Temperature(1)
Junction Temperature
Min Typ Max Units
Conditions
0
V
-5.5 -5.2 -4.9
V
-40
85(2) °C Power dissipation = 1.25W
125 °C
NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature.
(2) See “Calculation of the Maximum Case Temperature” section for detailed maximum temperature calculations.
Page 2
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52156-0, Rev 3.0
05/01/01
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