VSC7807X 查看數據表（PDF） - Vitesse Semiconductor
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产品描述 (功能)
生产厂家
VSC7807X
Vitesse Semiconductor
VSC7807X Datasheet PDF : 10 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Advance Product Information
VSC7807
Table 1: Electro-Optical Specifications(1)
Symbol
Parameters
Min Typ(2) Max Units
Conditions
VSS
IDD
PSRR
Supply Voltage
Supply Current
Power Supply Rejection Ratio
3.0
3.3
3.6
-
-
40
-
-10
-
V
mA
Frequencies up to 40MHz.
dB Use external filter to get PSRR
of -35dB(3).
λ
Wavelength
Fc
Low Frequency Cutoff
BW
Optical Modulation Bandwidth
S
Sensitivity
700
840
850
-
1.0
2.5
-
1300
-
-
20
-
nm
MHz
MHz
dBm
-3dB, P(4) = -15dBm
-3dB, P = -15dBm
2.488Gb/s, BER10-12(5)
Ro
Single-Ended Output Impedance
-
25
-
Ω
VD
Differential Output Voltage
0.2
-
-
V
P = -5 dBm,
RL= 100Ω differential
RD
Differential Responsivity
1.6
2.0
-
mV/µW
RL = 100Ω
At 50MHz
VDC
∆VDC
NEPO
VNO
DCD
Output Bias Voltage
Bias Offset Voltage
Input Noise Equivalent Power
Output Noise Voltage
Duty Cycle Distortion
1.0
-
-
V
-
-
200
mV
-
1
2.2 µW rms P = 0mW
-
-
1.25 mV rms P = 0mW
-
-
4.5
% P = -5dBm
IOUT
PDJ
Output Drive Current
Pattern Dependent Jitter
2.0
2.6
-
mA P = -5dBm
-
-
40
ps
P = -5dBm
+/-10% Voltage Window
Optically Active Area
-
70
-
µm Diameter
PPJ
PP Jitter
-
190
200
ps
P = -5dBm
TR
Rise Time
TF
Fall Time
-
-
200
ps
20% to 80% P = -5dBm
-
-
200
ps
20% to 80% P = -5dBm
NOTES: (1) Specified over 10°C to 90°C junction. (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in Appli-
cation Note 48. (4) P = Incident Optical Power. (5) See Note 2 In Application Note 48.
Page 2
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52363-0, Rev 2.1
04/05/01
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