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VSC7807WD 查看數據表(PDF) - Vitesse Semiconductor

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VSC7807WD Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Advance Product Information
VSC7807
Figure 2: Pad Assignments
1481µm (58.3mils)
Pad 3
CLON
Pad 4
VGND
835µm
(32.9mils)
VSC7807
Pad 2
CLOP
Pad 1
VGND
Pad 5
VGND
Pad 6
VDD
Die Size:
835µm x 1481µm (32.9mils x 58.3mils)
Die Thickness:
635µm (26mils)
Pad Sizes:
108µm x 108µm (4.3mils x 4.3mils)
244µm x 108µm (9.6mils x 4.3mils)
Pad Passivation Openings: 86µm x 86µm (3.4mils x 3.4mils)
223µm x 86µm (8.8mils x 3.4mils)
Scribe Size:
157µm (6.2mils)
157µm
(6.2mils)
Table 3: Pad Coordinates
Signal
Name
VGND
CLOP
CLON
VGND
VGND
VDD
Pad
Number
1
2
3
4
5
6
Coordinates (µm)
X
Y
55
55
780
780
596.7
244.2
943.6
1093.6
1093.6
943.6
61.4
61.4
Description
Ground
Data output, true (with reference to incident light)
Data output, complement (with reference to incident light)
Ground
Ground
Power Supply
Page 4
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52363-0, Rev 2.1
04/05/01

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